Invention Application
US20100193827A1 Pixel Structure and Method for Fabricating the Same 有权
像素结构及其制造方法

  • Patent Title: Pixel Structure and Method for Fabricating the Same
  • Patent Title (中): 像素结构及其制造方法
  • Application No.: US12507935
    Application Date: 2009-07-23
  • Publication No.: US20100193827A1
    Publication Date: 2010-08-05
  • Inventor: Hsiang-Lin Lin
  • Applicant: Hsiang-Lin Lin
  • Applicant Address: TW Hsin-Chu
  • Assignee: AU OPTRONICS CORPORATION
  • Current Assignee: AU OPTRONICS CORPORATION
  • Current Assignee Address: TW Hsin-Chu
  • Priority: TW98103286 20090202
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Pixel Structure and Method for Fabricating the Same
Abstract:
A pixel structure includes a first patterned metal layer, a gate insulating layer, a semiconductor channel layer, a second patterned metal layer, a passivation layer, and a conducting layer. A gate line of the second patterned metal layer is electrically connected by the conducting layer to a gate extension electrode of the first patterned metal layer. A source electrode of the second patterned metal layer is electrically connected by the conducting layer to a second data line segment of the first patterned metal layer. A method for fabricating a pixel structure is also disclosed herein.
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