发明申请
- 专利标题： NON-VOLATILE MEMORY DEVICE USING HOT-CARRIER INJECTION
- 专利标题（中）： 使用热载体注射的非易失性存储器件
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申请号： US12692923申请日： 2010-01-25
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公开(公告)号： US20100193854A1公开(公告)日： 2010-08-05
- 发明人: Roger Allen Booth, JR. , Kangguo Cheng , Chandrasekharan Kothandaraman , Chengwen Pei
- 申请人： Roger Allen Booth, JR. , Kangguo Cheng , Chandrasekharan Kothandaraman , Chengwen Pei
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/335
摘要：
Each of a hot-carrier non-volatile memory device and a method for fabricating the hot carrier non-volatile memory device is predicated upon a semiconductor structure and related method that includes a metal oxide semiconductor field effect transistor structure. The semiconductor structure and related method include at least one of: (1) a spacer that comprises a dielectric material having a dielectric constant greater than 7 (for enhanced hot carrier derived charge capture and retention); and (2) a drain region that comprises a semiconductor material that has a narrower bandgap than a bandgap of a semiconductor material from which is comprised a channel region (for enhanced impact ionization and charged carrier generation).
公开/授权文献
- US08384145B2 Non-volatile memory device using hot-carrier injection 公开/授权日：2013-02-26
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