发明申请
- 专利标题： CAPACITOR STRUCTURE IN A SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件中的电容结构
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申请号： US12759615申请日： 2010-04-13
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公开(公告)号： US20100193907A1公开(公告)日： 2010-08-05
- 发明人: Philip John Crawley , Sajol Ghoshal
- 申请人： Philip John Crawley , Sajol Ghoshal
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
A semiconductor device comprises an integrated circuit formed on a substrate with a signal interface and at least one isolator capacitor. The integrated circuit comprises a plurality of interleaved inter-metal dielectric layers and interlayer dielectrics formed on the substrate, a thick passivation layer formed on the plurality of the interleaved inter-metal dielectric layers and interlayer dielectrics, and a thick metal layer formed on the thick passivation layer. The thick passivation layer has a thickness selected to be greater than the isolation thickness whereby testing for defects is eliminated. The one or more isolator capacitors comprise the thick metal layer and a metal layer in the plurality of interleaved inter-metal dielectric layers and interlayer dielectrics separated by the thick passivation layer as an insulator.