Invention Application
- Patent Title: HIGH SELECTIVITY, LOW DAMAGE ELECTRON-BEAM DELINEATION ETCH
- Patent Title (中): 高选择性，低损耗电子束分层蚀刻
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Application No.: US12363376Application Date: 2009-01-30
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Publication No.: US20100197142A1Publication Date: 2010-08-05
- Inventor: STEVEN RANDOLPH , CLIVE D. CHANDLER
- Applicant: STEVEN RANDOLPH , CLIVE D. CHANDLER
- Applicant Address: US OR Hillsboro
- Assignee: FEI COMPANY
- Current Assignee: FEI COMPANY
- Current Assignee Address: US OR Hillsboro
- Main IPC: H01L21/306
- IPC: H01L21/306
Abstract:
A method and apparatus for selective etching a substrate using a focused beam. For example, multiple gases may be used that are involved in competing beam-induced and spontaneous reactions, with the result depending on the materials on the substrate. The gases may include, for example, an etchant gas and an auxiliary gas that inhibits etching.
Public/Granted literature
- US08778804B2 High selectivity, low damage electron-beam delineation etch Public/Granted day:2014-07-15
Information query
IPC分类:
