发明申请
US20100199135A1 METHOD, SYSTEM AND COMPUTER-READABLE CODE TO TEST FLASH MEMORY
有权
方法，系统和计算机可读代码到测试闪存
- 专利标题： METHOD, SYSTEM AND COMPUTER-READABLE CODE TO TEST FLASH MEMORY
- 专利标题（中）： 方法，系统和计算机可读代码到测试闪存
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申请号： US12755519申请日： 2010-04-07
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公开(公告)号： US20100199135A1公开(公告)日： 2010-08-05
- 发明人: MARK MURIN , MENAHEM LASSER , AVRAHAM MEIR
- 申请人： MARK MURIN , MENAHEM LASSER , AVRAHAM MEIR
- 申请人地址： IL Kfar Saba
- 专利权人： SANDISK IL LTD. (formerly M-SYSTEMS FLASH DISK PIONEERS LTD.)
- 当前专利权人： SANDISK IL LTD. (formerly M-SYSTEMS FLASH DISK PIONEERS LTD.)
- 当前专利权人地址： IL Kfar Saba
- 主分类号： G06F11/273
- IPC分类号： G06F11/273 ; G06F12/02
摘要：
A flash memory device includes a flash memory residing on at least one flash memory die. The flash memory device also includes a flash controller residing on a flash controller die that is separate from the at least one flash memory die. The flash memory and the flash controller reside within, reside on, or are attached to a common housing. The flash controller is configured to execute at least one test program to test at least one flash memory die.
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