Certain example embodiments relate to techniques for depositing transparent conductive oxide (TCO) coatings using dual C-MAG sputtering apparatuses. Certain example embodiments provide a closed-loop system with the following process conditions. About 90% of the oxygen gas provided to the apparatus is provided via a top gas inlet. Pressure within the apparatus is increased to about 10−3 to 10−2 mbar, e.g., by providing an inert gas flow of at least about 600 sccm in certain example embodiments. Tube rotation is reduced to less than about 5 RPM. The power provided to the apparatus is adjusted in dependence on the presence or absence of oxygen partial pressure oscillations. TCOs such as, for example, ITO, ZnAlOx, SnSbOx, may be deposited according to the techniques of certain example embodiments.