发明申请
- 专利标题： NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US12767639申请日： 2010-04-26
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公开(公告)号： US20100200903A1公开(公告)日： 2010-08-12
- 发明人: Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
- 申请人： Ming-Cheng Chang , Chih-Hsiung Hung , Mao-Ying Wang , Wei-Hui Hsu
- 申请人地址： TW Taoyuan
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW Taoyuan
- 优先权： TWTW96132709 20070903
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A nonvolatile memory device and method for fabricating the same are provided. The method for fabricating the nonvolatile memory device comprises providing a substrate. A tunnel insulating layer and a first conductive layer are formed in the substrate. A trench is formed through the first conductive layer and the tunnel insulating layer, wherein a portion of the substrate is exposed from the trench. A first insulating layer is formed in the trench. A second insulating layer is formed on sidewalls of the first insulating layer. A third insulating layer is conformably formed in the trench, covering the first insulating layer on a bottom portion of the trench and the second insulating layer on the sidewalls of the trench, wherein thickness of the third insulating layer on the sidewalls is thinner than that on the bottom of the trench. A control gate is formed on the third insulating layer in the trench.
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