发明申请
- 专利标题： Semiconductor Integrated Circuit Device and Method of Fabricating the Same
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US12704312申请日： 2010-02-11
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公开(公告)号： US20100200907A1公开(公告)日： 2010-08-12
- 发明人: Dong Chul Yoo , Eun-Ha Lee , Byong-Ju Kim , Hyung-Ik Lee , Sung Heo , Han-Mei Choi , Chan-Hee Park , Ki-Hyun Hwang
- 申请人： Dong Chul Yoo , Eun-Ha Lee , Byong-Ju Kim , Hyung-Ik Lee , Sung Heo , Han-Mei Choi , Chan-Hee Park , Ki-Hyun Hwang
- 优先权： KR10-2009-0011078 20090211
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/762 ; H01L21/28
摘要：
A semiconductor integrated circuit device is provided. The semiconductor integrated circuit device includes a plurality of isolation regions which are formed within a semiconductor substrate and define active regions. A tunnel layer and a trap seed layer are formed in each of the active regions and are sequentially stacked between the isolation regions. A trap layer is formed on the trap seed layer and protrudes further than a top surface of each of the isolation regions. A blocking layer is formed on the trap layer. A gate electrode is formed on the blocking layer.
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