发明申请
- 专利标题： Power Transistor Package with Integrated Bus Bar
- 专利标题（中）： 带集成母线的功率晶体管封装
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申请号： US12367719申请日： 2009-02-09
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公开(公告)号： US20100200979A1公开(公告)日： 2010-08-12
- 发明人: Cynthia Blair , Donald Fowlkes
- 申请人： Cynthia Blair , Donald Fowlkes
- 申请人地址： US CA Milpitas
- 专利权人： Infineon Technologies North America Corp.
- 当前专利权人： Infineon Technologies North America Corp.
- 当前专利权人地址： US CA Milpitas
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H05K13/00
摘要：
According to one embodiment, a power transistor package includes an electrically conductive flange configured to be connected to a source of a power transistor device. The package further includes a first terminal mechanically fastened to the flange and configured to be electrically connected to a gate of the power transistor device and a second terminal mechanically fastened to the flange and configured to be electrically connected to a drain of the power transistor device. The package also includes a bus bar mechanically fastened to the flange which extends between and connects at least two different DC bias terminals mechanically fastened to the flange. The bus bar is configured to be electrically connected to the drain via one or more RF grounded connections.
公开/授权文献
- US07994630B2 Power transistor package with integrated bus bar 公开/授权日：2011-08-09
信息查询
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