发明申请
- 专利标题： Dopant Enhanced Interconnect
- 专利标题（中）： 掺杂增强互连
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申请号： US12705143申请日： 2010-02-12
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公开(公告)号： US20100200991A1公开(公告)日： 2010-08-12
- 发明人: Rohan Akolkar , Sridhar Balakrishnan , Adrien R. Lavoie , Tejaswi K. Indukuri , James S. Clarke
- 申请人： Rohan Akolkar , Sridhar Balakrishnan , Adrien R. Lavoie , Tejaswi K. Indukuri , James S. Clarke
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/768
摘要：
Techniques are disclosed that enable an interconnect structure that is resistance to electromigration. A liner is deployed underneath a seed layer of the structure. The liner can be a thin continuous and conformal layer, and may also limit oxidation of an underlying barrier (or other underlying surface). A dopant that is compatible (non-alloying, non-reactive) with the liner is provided to alloy the seed layer, and allows for dopant segregation at the interface at the top of the seed layer. Thus, electromigration performance is improved.