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公开(公告)号：US20130249049A1
公开(公告)日：2013-09-26
申请号：US13894422
申请日：2013-05-14
CPC分类号： H01L21/02203 , C07F7/0816 , C07F7/1804 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L29/0649 , H01L51/0035 , H01L51/0094
摘要： Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.
摘要翻译： 本发明的实施例提供介电膜和低k电介质膜以及用于制造电介质和低k电介质膜的方法。 电介质膜由含碳硅烷的前体制成。 在本发明的实施方案中，电介质膜前体包含附着的致孔剂分子。 在另外的实施例中，电介质膜具有纳米尺寸的孔。
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公开(公告)号：US08441006B2
公开(公告)日：2013-05-14
申请号：US12978385
申请日：2010-12-23
IPC分类号： H01L51/00
CPC分类号： H01L21/02203 , C07F7/0816 , C07F7/1804 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L29/0649 , H01L51/0035 , H01L51/0094
摘要： Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.
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公开(公告)号：US20120161320A1
公开(公告)日：2012-06-28
申请号：US12978175
申请日：2010-12-23
申请人： Rohan N. Akolkar , James S. Clarke
发明人： Rohan N. Akolkar , James S. Clarke
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/76858 , H01L21/76867 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Electrical interconnects for integrated circuits and methods of fabrication of interconnects are provided. Devices are provided comprising copper interconnects having metal liner layers comprising cobalt and a metal selected from the group consisting of Ru, Pt, Ir, Pd, Re, or Rh. Devices having barrier layers comprising ruthenium and cobalt are provided. Methods include providing a substrate having a trench or via formed therein, forming a metal layer, the metal being selected from the group consisting of Ru, Pt, Ir, Pd, Re, and Rh, onto surfaces of the feature, depositing a copper seed layer comprising a cobalt dopant, and depositing copper into the feature.
摘要翻译： 提供了用于集成电路的电互连和制造互连的方法。 提供了包括具有包含钴的金属衬里层和选自Ru，Pt，Ir，Pd，Re或Rh的金属的铜互连的器件。 提供具有包含钌和钴的阻挡层的器件。 方法包括提供具有在其中形成的沟槽或通孔的衬底，在特征的表面上形成金属层，金属层选自Ru，Pt，Ir，Pd，Re和Rh，沉积铜种子 层，其包含钴掺杂剂，并且将铜沉积到特征中。
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4.发明授权Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures 有权使用牺牲膜和所得结构在电介质材料中形成气隙的方法公开(公告)号：US07595555B2
公开(公告)日：2009-09-29
申请号：US11360097
申请日：2006-02-22
IPC分类号： H01L21/00
CPC分类号： H01L21/7682 , H01L21/76831 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.
摘要翻译： 在介电层中形成围绕导体的空气间隙的方法，该介电层包括例如集成电路器件的互连结构的一部分。 气隙部分地通过在已经形成在电介质层中的沟槽和/或通孔内沉积牺牲材料而形成，并且在金属沉积之后最终去除牺牲材料以产生气隙。 可以在电介质层上沉积多孔电介质盖，并且可以通过该多孔介电层去除牺牲材料。 描述和要求保护其他实施例。
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5.发明授权公开(公告)号：US07292330B2
公开(公告)日：2007-11-06
申请号：US11332195
申请日：2006-01-12
CPC分类号： G01N21/9501 , G01N21/956
摘要： A method is described that adjusts the position of a item and sets a tilt angle for each of a plurality of micro-mirrors of a digital micro-mirror device. The setting of the tilt angles is to establish a filter within the optical channel of an inspection tool that inspects the item. The filter is to reduce noise received at an optical detection device. The tilt angle settings are a function of the position. The method also includes comparing information from the optical detection device that describes an inspected region of the item's surface against an expected version of the information.
摘要翻译： 描述了一种调节物品的位置并为数字微镜装置的多个微反射镜中的每一个设置倾斜角的方法。 倾斜角的设置是在检查项目的检查工具的光通道内建立一个过滤器。 该滤波器用于减少在光学检测装置处接收到的噪声。 倾斜角度设置是位置的函数。 该方法还包括将来自光学检测装置的信息与描述物品表面的被检查区域与信息的预期版本进行比较。
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公开(公告)号：US20180151423A1
公开(公告)日：2018-05-31
申请号：US15570857
申请日：2015-06-03
申请人： Christopher J. Jezewski , Srijit Mukherjee , Daniel B. Bergstrom , Tejaswi K. Indukuri , Flavio Griggio , Ramanan V. Chebiam , James S. Clarke
发明人： Christopher J. Jezewski , Srijit Mukherjee , Daniel B. Bergstrom , Tejaswi K. Indukuri , Flavio Griggio , Ramanan V. Chebiam , James S. Clarke
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L21/76846 , H01L21/76843 , H01L23/5226 , H01L23/53209 , H01L23/53252 , H01L23/53266
摘要： In one embodiment, a conductive connector for a microelectronic component may be formed with a noble metal layer, acting as an adhesion/wetting layer, disposed between a barrier liner and a conductive fill material. In a further embodiment, the conductive connector may have a noble metal conductive fill material disposed directly on the barrier liner. The use of a noble metal as an adhesion/wetting layer or as a conductive fill material may improve gapfill and adhesion, which may result in the conductive connector being substantially free of voids, thereby improving the electrical performance of the conductive connector relative to conductive connectors without a noble metal as the adhesion/wetting layer or the conductive fill material.
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公开(公告)号：US09514983B2
公开(公告)日：2016-12-06
申请号：US13730184
申请日：2012-12-28
申请人： Christopher J. Jezewski , James S. Clarke , Tejaswi K. Indukuri , Florian Gstrein , Daniel J. Zierath
发明人： Christopher J. Jezewski , James S. Clarke , Tejaswi K. Indukuri , Florian Gstrein , Daniel J. Zierath
IPC分类号： H01L23/52 , H01L21/768 , H01L23/522 , H01L23/485 , H01L23/532
CPC分类号： H01L21/76841 , H01L21/288 , H01L21/76843 , H01L21/76847 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883 , H01L23/485 , H01L23/5226 , H01L23/53261 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal interconnect comprising cobalt and method of forming a metal interconnect comprising cobalt are described. In an embodiment, a metal interconnect comprising cobalt includes a dielectric layer disposed on a substrate, an opening formed in the dielectric layer such that the substrate is exposed. The embodiment further includes a seed layer disposed over the substrate and a fill material comprising cobalt formed within the opening and on a surface of the seed layer.
摘要翻译： 描述了包括钴的金属互连和形成包含钴的金属互连的方法。 在一个实施例中，包括钴的金属互连包括设置在基板上的电介质层，形成在电介质层中的开口，使得基板被暴露。 该实施例还包括设置在基板上的种子层和在开口内和种子层的表面上形成的包含钴的填充材料。
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公开(公告)号：US20120161295A1
公开(公告)日：2012-06-28
申请号：US12978385
申请日：2010-12-23
IPC分类号： H01L29/06 , H01L21/314
CPC分类号： H01L21/02203 , C07F7/0816 , C07F7/1804 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L29/0649 , H01L51/0035 , H01L51/0094
摘要： Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.
摘要翻译： 本发明的实施例提供介电膜和低k电介质膜以及用于制造电介质和低k电介质膜的方法。 电介质膜由含碳硅烷的前体制成。 在本发明的实施方案中，电介质膜前体包含附着的致孔剂分子。 在另外的实施例中，电介质膜具有纳米尺寸的孔。
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9.发明授权公开(公告)号：US07071091B2
公开(公告)日：2006-07-04
申请号：US10828885
申请日：2004-04-20
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76831 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.
摘要翻译： 在介电层中形成围绕导体的空气间隙的方法，该介电层包括例如集成电路器件的互连结构的一部分。 气隙部分地通过在已经形成在电介质层中的沟槽和/或通孔内沉积牺牲材料而形成，并且在金属沉积之后最终去除牺牲材料以产生气隙。 可以在电介质层上沉积多孔电介质盖，并且可以通过该多孔介电层去除牺牲材料。 描述和要求保护其他实施例。
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公开(公告)号：US20140029181A1
公开(公告)日：2014-01-30
申请号：US13560930
申请日：2012-07-27
申请人： Florian Gstrein , Hui Jae Yoo , Jacob M. Faber , James S. Clarke
发明人： Florian Gstrein , Hui Jae Yoo , Jacob M. Faber , James S. Clarke
IPC分类号： H01L23/522 , G06F1/16 , H01L21/768
CPC分类号： H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present disclosure are directed towards interlayer interconnects and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, one or more device layers disposed on the semiconductor substrate, and one or more interconnect layers disposed on the one or more device layers, the one or more interconnect layers including interconnect structures configured to route electrical signals to or from the one or more device layers, the interconnect structures comprising copper (Cu) and germanium (Ge). Other embodiments may be described and/or claimed.
摘要翻译： 本公开的实施例涉及层间互连和相关联的技术和配置。 在一个实施例中，一种装置包括半导体衬底，设置在半导体衬底上的一个或多个器件层，以及设置在该一个或多个器件层上的一个或多个互连层，所述一个或多个互连层包括被配置为布线 信号到或来自一个或多个器件层，包括铜（Cu）和锗（Ge）的互连结构。 可以描述和/或要求保护其他实施例。
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