发明申请
- 专利标题: ELECTRICALLY ISOLATED VERTICAL LIGHT EMITTING DIODE STRUCTURE
- 专利标题(中): 电气隔离垂直发光二极管结构
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申请号: US12677647申请日: 2008-09-12
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公开(公告)号: US20100201280A1公开(公告)日: 2010-08-12
- 发明人: James Stuart McKenzie , Majd Zoorob
- 申请人: James Stuart McKenzie , Majd Zoorob
- 申请人地址: GB Hants
- 专利权人: PHOTONSTAR LED LIMITED
- 当前专利权人: PHOTONSTAR LED LIMITED
- 当前专利权人地址: GB Hants
- 优先权: GB0717802.3 20070912
- 国际申请: PCT/GB2008/003110 WO 20080912
- 主分类号: H01L33/62
- IPC分类号: H01L33/62 ; H01L33/10 ; H01L33/08 ; H01L33/12 ; H05B37/02
摘要:
A light emitting device is provided having high luminous output while maintaining high wall plug efficiency, wherein the high thermal and electrical conductivity paths of the device are separated during the semiconductor wafer and die level manufacturing step. The device includes an electrical conducting mirror layer, which reflects at least 60% of generated light incident on it, and an isolation layer having electrical insulating properties and thermal conducting properties. A first electrode, which is not in contact with the main semiconductor layers of the device, is located on the mirror layer. A light emitting module, system and projection system incorporating the light emitting device are also described, as is a method of manufacture of the device.
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