Invention Application
US20100202209A1 FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF 有权
闪存存储器件及其程序方法

  • Patent Title: FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF
  • Patent Title (中): 闪存存储器件及其程序方法
  • Application No.: US12763127
    Application Date: 2010-04-19
  • Publication No.: US20100202209A1
    Publication Date: 2010-08-12
  • Inventor: Hee Youl LEE
  • Applicant: Hee Youl LEE
  • Applicant Address: KR Icheon-si
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Icheon-si
  • Priority: KR2006-96007 20060929; KR2007-63576 20070627
  • Main IPC: G11C16/10
  • IPC: G11C16/10
FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF
Abstract:
A flash memory device includes a memory cell array on which data is stored, and page buffers that are connected to the memory cells through the bit lines and apply one of the first voltage, second voltage or third voltage between the first and second voltage, to the respective bit line when performing the program.
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