发明申请
US20100203674A1 METHODS OF FABRICATING NANOSTRUCTURED ZnO ELECTRODES FOR EFFICIENT DYE SENSITIZED SOLAR CELLS
有权
制备高效透明太阳能电池的纳米结构ZnO电极的方法
- 专利标题： METHODS OF FABRICATING NANOSTRUCTURED ZnO ELECTRODES FOR EFFICIENT DYE SENSITIZED SOLAR CELLS
- 专利标题（中）： 制备高效透明太阳能电池的纳米结构ZnO电极的方法
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申请号： US12761884申请日： 2010-04-16
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公开(公告)号： US20100203674A1公开(公告)日： 2010-08-12
- 发明人: Ashutosh Tiwari , Michael R. Snure
- 申请人： Ashutosh Tiwari , Michael R. Snure
- 主分类号： H01L21/36
- IPC分类号： H01L21/36
摘要：
The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.
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