公开(公告)号：US09567390B2

公开(公告)日：2017-02-14

申请号：US12865623

申请日：2008-12-02

Applicant: Subrata Sinha ,  Ashutosh Tiwari ,  Navin Khanna ,  Subrat K. Acharya

Inventor： Subrata Sinha ,  Ashutosh Tiwari ,  Navin Khanna ,  Subrat K. Acharya

IPC: C07K16/00 ,  C07K16/08

CPC classification number: C07K16/082 ,  C07K2317/24 ,  C07K2317/565 ,  C07K2317/622 ,  C07K2317/92

Abstract: This invention relates to a high affinity recombinant humanized antibody fragment (scFv) specific for hepatitis B surface antigen having unique inter/intra chain bonding interaction because of 28 altered amino acid residues from the original mouse (5S) antibody and its chimeric Fab form, wherein fine tuning of the vernier zone residue makes it closer to the human sequence without any structural constraints.

Abstract translation: 本发明涉及由于来自原始小鼠（5S）抗体及其嵌合Fab形式的28个改变的氨基酸残基而具有独特的内/内链键合相互作用的乙型肝炎表面抗原特异性的高亲和力重组人源化抗体片段（scFv），其中 微调区域残余物的微调使其更接近于人类序列而没有任何结构限制。

公开(公告)号：US08732379B2

公开(公告)日：2014-05-20

申请号：US13285100

申请日：2011-10-31

Applicant: Ashutosh Tiwari

Inventor： Ashutosh Tiwari

IPC: G06F13/36 ,  G06F1/00

CPC classification number: G06F1/3237 ,  Y02D10/128 ,  Y02D50/20

Abstract: An apparatus adapts a pre-designed circuit module not supporting a power management protocol to a power management protocol. The apparatus disconnects a bus interface, disables interrupt and stops a clock to the pre-designed circuit module on a external idle request signal.

Abstract translation: 一种装置将不支持电源管理协议的预先设计的电路模块与电源管理协议相匹配。 该设备断开总线接口，禁止中断，并在外部空闲请求信号上停止对预先设计的电路模块的时钟。

公开(公告)号：US08644808B2

公开(公告)日：2014-02-04

申请号：US12059460

申请日：2008-03-31

Applicant: Arvind Gupta ,  Ashutosh Tiwari ,  Gopalakrishnan Venkatraman ,  Dominic Cheung ,  Stacy R. Bennett ,  Douglas B. Koen

Inventor： Arvind Gupta ,  Ashutosh Tiwari ,  Gopalakrishnan Venkatraman ,  Dominic Cheung ,  Stacy R. Bennett ,  Douglas B. Koen

IPC: H04L29/08

CPC classification number: G06Q30/0257 ,  G06Q30/02 ,  G06Q30/0256 ,  H04M1/72561

Abstract: A system for providing mobile advertisement actions may include a memory to store a request, mobile carrier data, mobile advertisement data, and mobile advertisement action data. The system may include an interface operatively connected to the memory to communicate with a mobile device. The system may include a processor operatively connected to the memory and the interface. The processor may receive information and a request from the mobile device via the interface and may determine the mobile carrier data relating to a mobile carrier associated with the mobile device. The processor may identify the mobile advertisement data and the mobile advertisement action targeted to the request and the mobile carrier data. The processor may append the mobile advertisement action data to the mobile advertisement data. The processor may provide the mobile advertisement data with the appended mobile advertisement action data to the mobile device via the interface.

Abstract translation: 用于提供移动广告动作的系统可以包括存储请求，移动运营商数据，移动广告数据和移动广告动作数据的存储器。 系统可以包括可操作地连接到存储器以与移动设备通信的接口。 该系统可以包括可操作地连接到存储器和接口的处理器。 处理器可以经由接口从移动设备接收信息和请求，并且可以确定与移动设备相关联的移动运营商相关的移动运营商数据。 处理器可以识别针对该请求的移动广告数据和移动广告动作以及移动运营商数据。 处理器可以将移动广告动作数据附加到移动广告数据。 处理器可以经由接口向移动设备提供移动广告数据与附加的移动广告动作数据。

公开(公告)号：US08431928B2

公开(公告)日：2013-04-30

申请号：US13326648

申请日：2011-12-15

Applicant: Ashutosh Tiwari ,  Makarand Karmarkar ,  Nathan Wheeler Gray

Inventor： Ashutosh Tiwari ,  Makarand Karmarkar ,  Nathan Wheeler Gray

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC classification number: H01L21/02532 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3678 ,  C03C2217/944 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02463 ,  H01L21/02513 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L31/0304 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/20 ,  Y02E10/544 ,  Y02E10/548

Abstract: Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.

Abstract translation: 本文提供的PIN结构包括非晶n型硅层，设置在无定形n型硅层上的本征GaAs层，以及设置在本征GaAs层上的非晶p型硅层。 可以通过所公开的方法对本征GaAs层进行工程化，以展示增强光吸收和电荷载流子迁移率的各种结构特性，包括定向多晶本征GaAs，本征GaAs的嵌入颗粒和纹理表面。 还提供了结合PIN结构的器件，包括光伏器件。

公开(公告)号：US08290610B2

公开(公告)日：2012-10-16

申请号：US12235836

申请日：2008-09-23

Applicant: Robert Lloyd ,  Peter Lunt ,  Jeremy Cushen ,  Ashutosh Tiwari ,  Kostas Vergidis

Inventor： Robert Lloyd ,  Peter Lunt ,  Jeremy Cushen ,  Ashutosh Tiwari ,  Kostas Vergidis

IPC: G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/31316 ,  G05B2219/35291 ,  Y02P90/22

Abstract: The present disclosure discloses a method of manufacturing an article. According to at least one embodiment, a set of manufacturing instructions is stored for a machine, and at least one of the manufacturing instructions is imputed into the machine. In addition, an article is manufactured with the machine in accordance with the input manufacturing instructions, and a realisation log which is indicative of the operations that the machine has actually performed in manufacturing the article is generated. Further, a report by comparing the realisation log with the stored set of manufacturing instructions is generated.

Abstract translation: 本公开公开了一种制造制品的方法。 根据至少一个实施例，为机器存储一组制造指令，并且至少一个制造指令被归入机器。 此外，根据输入的制造说明，用机器制造制品，并且生成表示机器在制造制品中实际执行的操作的实现日志。 此外，生成通过比较实现日志和存储的制造指令集的报告。

公开(公告)号：US08196095B2

公开(公告)日：2012-06-05

申请号：US12026515

申请日：2008-02-05

Applicant: Arvind Gupta ,  Ashutosh Tiwari ,  Gopalakrishnan Venkatraman ,  Dominic Cheung ,  Stacy R. Bennett ,  Douglas B. Koen

Inventor： Arvind Gupta ,  Ashutosh Tiwari ,  Gopalakrishnan Venkatraman ,  Dominic Cheung ,  Stacy R. Bennett ,  Douglas B. Koen

IPC: G06F9/44

CPC classification number: G06Q30/02

Abstract: Disclosed is a method for facilitating quick mobile website creation by mobile advertisers, including providing access to an advertiser of a mobile marketing application that interfaces with an ad server, wherein the advertiser is authenticated for access to the ad server; enabling the advertiser to input to an interface of the application a plurality of content items selected from the group consisting of a descriptive text, an image, a phone number, and a hyperlink; presenting the advertiser with a go live option; automatically creating the mobile website to include the submitted content items when the go live option is selected, wherein the application facilitates rapid creation by the advertiser of a mobile website having a plurality of web pages, and the mobile website is optimized for mobile delivery; subjecting the created mobile website to a plurality of error checks; and publishing the mobile website to a network through a mobile service provider system.

Abstract translation: 公开了一种用于促进移动广告主的快速移动网站创建的方法，包括向与广告服务器接口的移动营销应用的广告商提供访问，其中广告商被认证用于访问广告服务器; 使所述广告商能够向所述应用的接口输入从由描述性文本，图像，电话号码和超链接组成的组中选择的多个内容项目; 向广告客户呈现直播选项; 自动创建移动网站，以便在选择去往活动选项时包括所提交的内容项，其中该应用促进广告主快速创建具有多个网页的移动网站，并且移动网站被优化用于移动传送; 对创建的移动网站进行多次错误检查; 并通过移动服务提供商系统将移动网站发布到网络。

公开(公告)号：US08164092B2

公开(公告)日：2012-04-24

申请号：US13004975

申请日：2011-01-12

Applicant: Ashutosh Tiwari ,  Makarand Karmarkar ,  Nathan Wheeler Gray

Inventor： Ashutosh Tiwari ,  Makarand Karmarkar ,  Nathan Wheeler Gray

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC classification number: H01L21/02532 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3678 ,  C03C2217/944 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02463 ,  H01L21/02513 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L31/0304 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/20 ,  Y02E10/544 ,  Y02E10/548

Abstract: Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.

Abstract translation: 本文提供的PIN结构包括非晶n型硅层，设置在无定形n型硅层上的本征GaAs层，以及设置在本征GaAs层上的非晶p型硅层。 可以通过所公开的方法对本征GaAs层进行工程化，以展示增强光吸收和电荷载流子迁移率的各种结构特性，包括定向多晶本征GaAs，本征GaAs的嵌入颗粒和纹理表面。 还提供了结合PIN结构的器件，包括光伏器件。

公开(公告)号：US07972900B2

公开(公告)日：2011-07-05

申请号：US12761884

申请日：2010-04-16

Applicant: Ashutosh Tiwari ,  Michael R. Snure

Inventor： Ashutosh Tiwari ,  Michael R. Snure

IPC: H01L21/00 ,  H01L21/16

CPC classification number: H01G9/204 ,  B82Y30/00 ,  C01G9/02 ,  C01P2004/03 ,  C01P2004/64 ,  C01P2006/40 ,  H01G9/2059 ,  Y02E10/542 ,  Y10S977/723 ,  Y10S977/782 ,  Y10S977/811

Abstract: The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.

Abstract translation: 本发明提供形成金属氧化物半导体纳米结构的方法，特别是在各种基底上具有高表面积，植物样形态的氧化锌（ZnO）半导体纳米结构。 还提供了纳入纳米结构的光电器件，例如光伏电池。

公开(公告)号：US20110132462A1

公开(公告)日：2011-06-09

申请号：US12980304

申请日：2010-12-28

Applicant: Michael Lynn Free ,  Prashant Kumar Sarswat ,  Ashutosh Tiwari ,  Michael Snure

Inventor： Michael Lynn Free ,  Prashant Kumar Sarswat ,  Ashutosh Tiwari ,  Michael Snure

IPC: H01L31/0264 ,  H01L29/12 ,  H01L21/36

CPC classification number: H01L21/02551 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/032

Abstract: Provided herein are multicomponent semiconductor films having a broad range of bandgaps and charge carrier characteristics. The semiconductor films include copper, zinc, tin, at least one substitutional metal and at least one chalcogen. Substitutional metals include those capable of substituting for a portion of copper, zinc, or both in the semiconductor films. Also disclosed are methods for making the films, including single-bath electrodeposition methods, and devices incorporating the films, including photovoltaic devices.

Abstract translation: 本文提供了具有宽范围带隙和电荷载流子特性的多组分半导体膜。 半导体膜包括铜，锌，锡，至少一种取代金属和至少一种硫族元素。 替代金属包括在半导体膜中能够代替铜，锌或两者的一部分的金属。 还公开了制备薄膜的方法，包括单浴电沉积方法，以及包括膜的装置，包括光伏器件。

公开(公告)号：US07804149B2

公开(公告)日：2010-09-28

申请号：US11695393

申请日：2007-04-02

Applicant: Ashutosh Tiwari ,  Michael R. Snure

Inventor： Ashutosh Tiwari ,  Michael R. Snure

IPC: H01L31/0352 ,  H01L31/0296 ,  H01L29/41

CPC classification number: H01G9/204 ,  B82Y30/00 ,  C01G9/02 ,  C01P2004/03 ,  C01P2004/64 ,  C01P2006/40 ,  H01G9/2059 ,  Y02E10/542 ,  Y10S977/723 ,  Y10S977/782 ,  Y10S977/811

Abstract: The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.

Abstract translation: 本发明提供形成金属氧化物半导体纳米结构的方法，特别是在各种基底上具有高表面积，植物样形态的氧化锌（ZnO）半导体纳米结构。 还提供了纳入纳米结构的光电器件，例如光伏电池。