发明申请
- 专利标题: NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 非易失性半导体存储器件
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申请号: US12644821申请日: 2009-12-22
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公开(公告)号: US20100207187A1公开(公告)日: 2010-08-19
- 发明人: Nobutoshi Aoki , Masaki Kondo , Takashi Izumida
- 申请人: Nobutoshi Aoki , Masaki Kondo , Takashi Izumida
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-036271 20090219
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
A nonvolatile semiconductor memory device comprises a memory cell. The memory cell includes a first gate insulating film formed on a semiconductor substrate, a floating gate formed on the first gate insulating film, a second gate insulating film formed on the floating gate, and a control gate formed on the second gate insulating film. The floating gate includes a first semiconductor film which contacts the first gate insulating film, and a metal film stacked on the semiconductor film. An effective tunneling thickness between the semiconductor substrate and the floating gate in a read operation is thicker than an effective tunneling thickness between the semiconductor substrate and the floating in a write operation.