发明申请
US20100213572A1 Dual-Dielectric MIM Capacitors for System-on-Chip Applications
有权
用于片上系统应用的双电介质MIM电容器
- 专利标题： Dual-Dielectric MIM Capacitors for System-on-Chip Applications
- 专利标题（中）： 用于片上系统应用的双电介质MIM电容器
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申请号： US12618021申请日： 2009-11-13
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公开(公告)号： US20100213572A1公开(公告)日： 2010-08-26
- 发明人: Kuo-Cheng Ching , Kuo-Chi Tu
- 申请人： Kuo-Cheng Ching , Kuo-Chi Tu
- 主分类号： H01L29/92
- IPC分类号： H01L29/92
摘要：
An integrated circuit structure includes a chip having a first region and a second region. A first metal-insulator-metal (MIM) capacitor is formed in the first region. The first MIM capacitor has a first bottom electrode; a first top electrode over the first bottom electrode; and a first capacitor insulator between and adjoining the first bottom electrode and the first top electrode. A second MIM capacitor is in the second region and is substantially level with the first MIM capacitor. The second MIM capacitor includes a second bottom electrode; a second top electrode over the second bottom electrode; and a second capacitor insulator between and adjoining the second bottom electrode and the second top electrode. The second capacitor insulator is different from the first capacitor insulator. The first top electrode and the first bottom electrode may be formed simultaneously with the second top electrode and the second bottom electrode, respectively.
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