Invention Application
US20100214545A1 Creating Metal Gate Structures Using Lithography-Etch-Lithography-Etch (LELE) Processing Sequences
有权
使用光刻蚀刻蚀刻蚀刻（LELE）处理序列创建金属栅极结构
- Patent Title: Creating Metal Gate Structures Using Lithography-Etch-Lithography-Etch (LELE) Processing Sequences
- Patent Title (中): 使用光刻蚀刻蚀刻蚀刻（LELE）处理序列创建金属栅极结构
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Application No.: US12391410Application Date: 2009-02-24
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Publication No.: US20100214545A1Publication Date: 2010-08-26
- Inventor: Merritt Funk , Daniel J. Prager , Asao Yamashita , Radha Sundararajan
- Applicant: Merritt Funk , Daniel J. Prager , Asao Yamashita , Radha Sundararajan
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03C5/00
Abstract:
The invention can provide apparatus and methods of creating metal gate structures on wafers in real-time using Lithography-Etch-Lithography-Etch (LELE) processing sequence. Real-time data and/or historical data associated with LELE processing sequences can be fed forward and/or fed back as fixed variables or constrained variables in internal-Integrated-Metrology modules (i-IMM) to improve the accuracy of the metal gate structures.
Public/Granted literature
- US08183062B2 Creating metal gate structures using Lithography-Etch-Lithography-Etch (LELE) processing sequences Public/Granted day:2012-05-22
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