发明申请
US20100215309A1 ELECTRICAL CONTACTS ON TOP OF WAVEGUIDE STRUCTURES FOR EFFICIENT OPTICAL MODULATION IN SILICON PHOTONIC DEVICES
有权
用于在硅光电器件中进行有效光学调制的波形结构顶部的电气接触
- 专利标题: ELECTRICAL CONTACTS ON TOP OF WAVEGUIDE STRUCTURES FOR EFFICIENT OPTICAL MODULATION IN SILICON PHOTONIC DEVICES
- 专利标题(中): 用于在硅光电器件中进行有效光学调制的波形结构顶部的电气接触
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申请号: US12389608申请日: 2009-02-20
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公开(公告)号: US20100215309A1公开(公告)日: 2010-08-26
- 发明人: Ivan Shubin , Guoliang Li , John E. Cunningham , Ashok Krishnamoorthy , Xuezhe Zheng
- 申请人: Ivan Shubin , Guoliang Li , John E. Cunningham , Ashok Krishnamoorthy , Xuezhe Zheng
- 申请人地址: US CA Santa Clara
- 专利权人: SUN MICROSYSTEMS, INC.
- 当前专利权人: SUN MICROSYSTEMS, INC.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: G02F1/035
- IPC分类号: G02F1/035 ; H01L29/06
摘要:
A phase modulation waveguide structure includes one of a semiconductor and a semiconductor-on-insulator substrate, a doped semiconductor layer formed over the one of a semiconductor and a semiconductor-on-insulator substrate, the doped semiconductor portion including a waveguide rib protruding from a surface thereof not in contact with the one of a semiconductor and a semiconductor-on-insulator substrate, and an electrical contact on top of the waveguide rib. The electrical contact is formed of a material with an optical refractive index close to that of a surrounding oxide layer that surrounds the waveguide rib and the electrical contact and lower than the optical refractive index of the doped semiconductor layer. During propagation of an optical mode within the waveguide structure, the electrical contact isolates the optical mode between the doped semiconductor layer and a metal electrode contact on top of the electrical contact.
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