发明申请
- 专利标题: LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 发光装置及其制造方法
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申请号: US12775119申请日: 2010-05-06
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公开(公告)号: US20100216272A1公开(公告)日: 2010-08-26
- 发明人: Gyu Beom Kim , Sang Joon Lee , Chang Suk Han , Kwang Choong Kim
- 申请人: Gyu Beom Kim , Sang Joon Lee , Chang Suk Han , Kwang Choong Kim
- 申请人地址: KR Ansan-si
- 专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人地址: KR Ansan-si
- 优先权: KR10-2008-0027494 20080325
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.
公开/授权文献
- US08716048B2 Light emitting device and method for manufacturing the same 公开/授权日:2014-05-06