Manufacturing method of flow passage network and flow passage network using the same
    2.
    发明授权
    Manufacturing method of flow passage network and flow passage network using the same 有权
    流通网络和流通网络的制造方法采用相同的方式

    公开(公告)号:US08640734B2

    公开(公告)日:2014-02-04

    申请号:US12944470

    申请日:2010-11-11

    摘要: An exemplary embodiment of the present invention relates to a manufacturing method of a flow passage network and a flow passage network for minimizing energy loss occurring during fluid flow, and there are effects in which flow loss is reduced during fluid transport and the energy efficiency of flow passages increases by optimizing geometric factors of flow passages on the basis of biomimetic techniques and theoretical formulae of fluid mechanics. Further, it is effective in manufacturing microfluidics in which laminar flow with a low Reynolds number is dominant.

    摘要翻译: 本发明的示例性实施例涉及一种用于使流体流动期间发生的能量损失最小化的流路网络和流路网络的制造方法,并且存在在流体输送期间流量损失减少并且流动能量效率的效果 通过在流体力学的仿生技术和理论公式的基础上优化流道的几何因子来增加通道。 此外,在制造具有低雷诺数的层流主导的微流体中是有效的。

    Light emitting diode with improved structure
    3.
    发明授权
    Light emitting diode with improved structure 有权
    具有改进结构的发光二极管

    公开(公告)号:US08525220B2

    公开(公告)日:2013-09-03

    申请号:US12143963

    申请日:2008-06-23

    IPC分类号: H01L33/00

    CPC分类号: H01L33/14 H01L33/325

    摘要: Disclosed is a light emitting diode (LED) with an improved structure. The LED comprises an N-type semiconductor layer, a P-type semiconductor layer and an active layer interposed between the N-type and P-type semiconductor layers. The P-type compound semiconductor layer has a laminated structure comprising a P-type clad layer positioned on the active layer, a hole injection layer positioned on the P-type clad layer, and a P-type contact layer positioned on the hole injection layer. Accordingly, holes are more smoothly injected into the active layer from the P-type semiconductor layer, thereby improving the recombination rate of electrons and holes.

    摘要翻译: 公开了一种具有改进结构的发光二极管(LED)。 LED包括N型半导体层,P型半导体层和介于N型和P型半导体层之间的有源层。 P型化合物半导体层具有包括位于有源层上的P型覆盖层,位于P型覆盖层上的空穴注入层和位于空穴注入层上的P型接触层的层叠结构 。 因此,从P型半导体层向空穴更顺畅地注入有源层,从而提高电子和空穴的复合率。

    LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20100216272A1

    公开(公告)日:2010-08-26

    申请号:US12775119

    申请日:2010-05-06

    IPC分类号: H01L21/20

    摘要: Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

    摘要翻译: 本文公开了一种发光器件。 发光器件包括n型氮化物半导体层; 在n型半导体层上的有源层,通过在有源层上交替生长AlN层和GaN层而形成的超晶格结构的AlN / GaN层和AlN / GaN上的p型氮化物半导体层 层的超晶格结构。 AlN层和GaN层中的至少一个掺杂有p型掺杂剂。 还提供了一种用于制造发光器件的方法。

    SUBSTRATE STRUCTURE FOR COLOR FILTER AND COLOR FILTER HAVING THE SAME
    5.
    发明申请
    SUBSTRATE STRUCTURE FOR COLOR FILTER AND COLOR FILTER HAVING THE SAME 审中-公开
    用于彩色滤光片和彩色滤光片的基板结构

    公开(公告)号:US20090017388A1

    公开(公告)日:2009-01-15

    申请号:US11872073

    申请日:2007-10-15

    IPC分类号: G03F1/00

    CPC分类号: G02B5/223 G02B5/201

    摘要: Provided is a substrate structure for a color filter and a color filter having the same. The substrate structure for color filter includes: a transparent substrate on which a plurality of pixels are defined by a black matrix; and an ink-philic pattern which is formed in a predetermined pattern on a surface of the substrate.

    摘要翻译: 提供了一种用于滤色器的基板结构和具有该滤色器的滤色器。 用于滤色器的基板结构包括:其上由黑矩阵限定多个像素的透明基板; 以及在基板的表面上以预定图案形成的亲墨图案。

    Fuel cell
    7.
    发明申请
    Fuel cell 失效
    燃料电池

    公开(公告)号:US20080102324A1

    公开(公告)日:2008-05-01

    申请号:US12004139

    申请日:2007-12-19

    IPC分类号: H01M8/02

    摘要: A simple, inexpensive and highly efficient fuel cell has boundary structures made of a photo-sensitive material in combination with selective patterning. Printed circuit board (PCB) fabrication techniques combine boundary structures with two and three dimensional electrical flow path. Photo-sensitive material and PCB fabrication techniques are alternately or combined utilized for making micro-channel structures or micro stitch structures for substantially reducing dead zones of the diffusion layer while keeping fluid flow resistance to a minimum. The fuel cell assembly is free of mechanical clamping elements. Adhesives that may be conductively contaminated and/or fiber-reinforced provide mechanical and eventual electrical connections, and sealing within the assembly. Mechanically supporting backing layers are pre-fabricated with a natural bend defined in combination with the backing layers' elasticity to eliminate massive support plates and assist the adhesive bonding. Proton insulation between adjacent and electrically linked in-plane cell elements is provided by structural insulation within the central membrane.

    摘要翻译: 简单,廉价和高效的燃料电池具有由选择性图案化组合的光敏材料制成的边界结构。 印刷电路板(PCB)制造技术将边界结构与二维和三维电流路相结合。 交替或组合的感光材料和PCB制造技术用于制造微通道结构或微缝合结构,用于基本上减少扩散层的死区,同时将流体阻力保持在最小。 燃料电池组件没有机械夹紧元件。 可能导电污染和/或纤维增强的粘合剂提供机械和最终的电连接,并在组件内密封。 机械支撑背衬层的预制件具有与背衬层弹性相结合定义的自然弯曲,以消除大量的支撑板并有助于粘结。 相邻和电连接的面内单元元件之间的质子绝缘由中心膜内的结构绝缘提供。

    DRUM-TYPE ELECTRO-OSMOSIS DEHYDRATOR CAPABLE OF REDUCING ELECTRICITY CONSUMPTION BY DECREASING GAP BETWEEN POSITIVE AND NEGATIVE ELECTRODES
    8.
    发明申请
    DRUM-TYPE ELECTRO-OSMOSIS DEHYDRATOR CAPABLE OF REDUCING ELECTRICITY CONSUMPTION BY DECREASING GAP BETWEEN POSITIVE AND NEGATIVE ELECTRODES 有权
    可以通过放电电极和负极电极之间的电弧消耗来降低电力消耗的鼓型电电动除菌器

    公开(公告)号:US20130015070A1

    公开(公告)日:2013-01-17

    申请号:US13574904

    申请日:2011-09-30

    申请人: Sang Joon Lee

    发明人: Sang Joon Lee

    IPC分类号: B01D61/56

    摘要: Provided is an electro-osmosis dehydrator, which includes a sludge supplying part disposed in a central upper portion thereof, and including a rotating part and two rollers disposed under the rotating part, a drum disposed under the sludge supplying part to receive sludge, and having a cylindrical shape rotating about an axis thereof, wherein an inner circumference of the drum is charged negatively or positively by direct current power, a caterpillar part spaced a certain distance from the drum, and moving along an endless track, wherein the caterpillar part includes a power applying part charged with polarity opposite to that of the drum by direct current power, a filtering fabric disposed under the power applying part, a caterpillar disposed under the filtering fabric, and including a plurality of holes, a vinyl part disposed between the filtering fabric and the caterpillar to prevent the sludge from passing through the caterpillar, and a chain disposed under the caterpillar, and a plurality of idle sprocket parts disposed on the inside of the caterpillar part, and engaging with the chain to drive the caterpillar part. A filtering fabric is removed from the space between positive and negative electrodes so as to decrease the gap therebetween, thereby reducing electricity consumption.

    摘要翻译: 提供一种电渗脱水器,其包括设置在其中央上部的污泥供给部,并且包括设置在旋转部下方的旋转部和两个辊,设置在污泥供给部下方以容纳污泥的鼓,具有 围绕其轴线旋转的圆柱形形状,其中滚筒的内圆周由直流动力负或正地充电,与鼓相隔一定距离的履带部分并沿着环形轨道移动,其中履带部分包括 通过直流电力充电与鼓的极性相反的功率施加部分,布置在功率施加部分下方的过滤织物,设置在过滤织物下方的毛毛虫,并且包括多个孔,设置在过滤织物之间的乙烯基部分 和毛虫,以防止污泥通过毛毛虫,以及设在毛毛虫下面的链条 设置在履带部分内侧的惰轮链轮零件的啮合,并与链条啮合以驱动履带部分。 从正极和负极之间的空间去除过滤织物,从而减小它们之间的间隙,从而减少电力消耗。

    Light emitting diode having barrier layer of superlattice structure
    10.
    发明授权
    Light emitting diode having barrier layer of superlattice structure 有权
    具有超晶格结构的阻挡层的发光二极管

    公开(公告)号:US08093583B2

    公开(公告)日:2012-01-10

    申请号:US12517314

    申请日:2007-11-21

    IPC分类号: H01L29/06 H01L31/00

    CPC分类号: H01L33/32 B82Y20/00 H01L33/06

    摘要: A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

    摘要翻译: 公开了一种具有超晶格结构的阻挡层的发光二极管(LED)。 在具有GaN基N型化合物半导体层和GaN系P型化合物半导体层之间的有源区域的LED中,有源区域包括阱层和具有超晶格结构的势垒层。 由于采用具有超晶格结构的阻挡层,可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。