发明申请
US20100221865A1 Crosstalk Improvement Through P On N Structure For Image Sensor
有权
通过P图像传感器的N结构进行串扰改善
- 专利标题： Crosstalk Improvement Through P On N Structure For Image Sensor
- 专利标题（中）： 通过P图像传感器的N结构进行串扰改善
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申请号： US12780625申请日： 2010-05-14
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公开(公告)号： US20100221865A1公开(公告)日： 2010-09-02
- 发明人: Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
- 申请人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ("TSMC")
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ("TSMC")
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L31/18
- IPC分类号： H01L31/18
摘要：
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
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