发明申请
- 专利标题： Hybrid Metal Fully Silicided (FUSI) Gate
- 专利标题（中）： 混合金属全硅化（FUSI）门
-
申请号： US12777937申请日： 2010-05-11
-
公开(公告)号： US20100221878A1公开(公告)日： 2010-09-02
- 发明人: Chen-Hua Yu , Cheng-Tung Lin , Cheng-Hung Chang , Hsiang-Yi Wang , Chen-Nan Yeh
- 申请人： Chen-Hua Yu , Cheng-Tung Lin , Cheng-Hung Chang , Hsiang-Yi Wang , Chen-Nan Yeh
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A semiconductor device and system for a hybrid metal fully silicided (FUSI) gate structure is disclosed. The semiconductor system comprises a PMOS gate structure, the PMOS gate structure including a first high-κ dielectric layer, a P-metal layer, a mid-gap metal layer, wherein the mid-gap metal layer is formed between the high-κ dielectric layer, the P-metal layer and a fully silicided layer formed on the P-metal layer. The semiconductor system further comprises an NMOS gate structure, the NMOS gate structure includes a second high-κ dielectric layer, the fully silicided layer, and the mid-gap metal layer, wherein the mid-gap metal layer is formed between the high-κ dielectric and the fully silicided layer.
公开/授权文献
- US07977772B2 Hybrid metal fully silicided (FUSI) gate 公开/授权日：2011-07-12
信息查询
IPC分类:
