发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US12716914申请日: 2010-03-03
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公开(公告)号: US20100224939A1公开(公告)日: 2010-09-09
- 发明人: Ju-youn Kim , Bong-seok Kim , Il-ryong Kim , Cheong-sik Yu , Ki-young Kim , Yu-jin Jeon
- 申请人: Ju-youn Kim , Bong-seok Kim , Il-ryong Kim , Cheong-sik Yu , Ki-young Kim , Yu-jin Jeon
- 优先权: KR10-2009-0018911 20090305
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L29/78
摘要:
Provided is a metal-oxide semiconductor (MOS) transistor containing a metal gate pattern. The semiconductor device includes a p-channel metal-oxide semiconductor (PMOS) transistor including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first metal gate conductive film formed on the first insulating film, and a nitrogen diffusion blocking film formed between the first insulating film and the first metal gate conductive film, and an n-channel metal-oxide semiconductor (NMOS) transistor including the semiconductor substrate, a second insulating film formed on the semiconductor substrate, a second metal gate conductive film formed on the second insulating film, and a reaction blocking film formed of metal nitride and formed between the second insulating film and the second metal gate conductive film. According to the inventive concept, a reaction between a metal gate film and an insulating film may be minimized so as to result in a highly reliable MOS transistor.