公开(公告)号：US20100224939A1

公开(公告)日：2010-09-09

申请号：US12716914

申请日：2010-03-03

申请人： Ju-youn Kim ,  Bong-seok Kim ,  Il-ryong Kim ,  Cheong-sik Yu ,  Ki-young Kim ,  Yu-jin Jeon

发明人： Ju-youn Kim ,  Bong-seok Kim ,  Il-ryong Kim ,  Cheong-sik Yu ,  Ki-young Kim ,  Yu-jin Jeon

IPC分类号： H01L27/092 ,  H01L29/78

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/51 ,  H01L29/78

摘要： Provided is a metal-oxide semiconductor (MOS) transistor containing a metal gate pattern. The semiconductor device includes a p-channel metal-oxide semiconductor (PMOS) transistor including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first metal gate conductive film formed on the first insulating film, and a nitrogen diffusion blocking film formed between the first insulating film and the first metal gate conductive film, and an n-channel metal-oxide semiconductor (NMOS) transistor including the semiconductor substrate, a second insulating film formed on the semiconductor substrate, a second metal gate conductive film formed on the second insulating film, and a reaction blocking film formed of metal nitride and formed between the second insulating film and the second metal gate conductive film. According to the inventive concept, a reaction between a metal gate film and an insulating film may be minimized so as to result in a highly reliable MOS transistor.

摘要翻译： 提供了含有金属栅极图案的金属氧化物半导体（MOS）晶体管。 半导体器件包括：包括半导体衬底的p沟道金属氧化物半导体（PMOS）晶体管，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的第一金属栅极导电膜，以及氮扩散阻挡膜 形成在第一绝缘膜和第一金属栅极导电膜之间，以及包括半导体衬底的n沟道金属氧化物半导体（NMOS）晶体管，形成在半导体衬底上的第二绝缘膜，形成在第一绝缘膜上的第二金属栅极导电膜 第二绝缘膜和由金属氮化物形成并形成在第二绝缘膜和第二金属栅极导电膜之间的反应阻挡膜。 根据本发明构思，可以使金属栅极膜和绝缘膜之间的反应最小化，从而导致高度可靠的MOS晶体管。