发明申请
- 专利标题： SCHOTTKY BARRIER DIODE AND METHOD OF PRODUCING THE SAME
- 专利标题（中）： 肖特彼勒二极管及其制造方法
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申请号： US12301944申请日： 2008-03-19
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公开(公告)号： US20100224952A1公开(公告)日： 2010-09-09
- 发明人: Tomihito Miyazaki , Makoto Kiyama
- 申请人： Tomihito Miyazaki , Makoto Kiyama
- 申请人地址： JP Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2007-078275 20070326
- 国际申请： PCT/JP2008/055089 WO 20080319
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L21/329
摘要：
A Schottky barrier diode includes an epitaxial growth layer disposed on a substrate and having a mesa portion, and a Schottky electrode disposed on the mesa portion, wherein a distance between an edge of the Schottky electrode and a top surface edge of the mesa portion is 2 μm or less. Since the distance x is 2 μm or less, a leakage current is significantly decreased, a breakdown voltage is improved, and a Schottky barrier diode having excellent reverse breakdown voltage characteristics is provide.
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