发明申请
US20100225200A1 Monolithic integrated CMUTs fabricated by low-temperature wafer bonding 有权
通过低温晶片接合制造的单片集成CMUT

Monolithic integrated CMUTs fabricated by low-temperature wafer bonding
摘要:
Low temperature wafer bonding (temperature of 450° C. or less) is employed to fabricate CMUTs on a wafer that already includes active electrical devices. The resulting structures are CMUT arrays integrated with active electronics by a low-temperature wafer bonding process. The use of a low-temperature process preserves the electronics during CMUT fabrication. With this approach, it is not necessary to make compromises in the CMUT or electronics designs, as is typical of the sacrificial release fabrication approach. Various disadvantages of sacrificial release, such as low process control, poor design flexibility, low reproducibility, and reduced performance are avoided with the present approach. With this approach, a CMUT array can be provided with per-cell electrodes connected to the substrate integrated circuitry. This enables complete flexibility in electronically assigning the CMUT cells to CMUT array elements.
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