发明申请
- 专利标题： EPITAXIAL FILM GROWING METHOD, WAFER SUPPORTING STRUCTURE AND SUSCEPTOR
- 专利标题（中）： 外延膜生长方法，支架结构和阻塞
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申请号： US12682850申请日： 2008-11-06
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公开(公告)号： US20100227455A1公开(公告)日： 2010-09-09
- 发明人: Takashi Fujikawa , Seiji Sugimoto
- 申请人： Takashi Fujikawa , Seiji Sugimoto
- 申请人地址： JP Tokyo
- 专利权人： SUMCO CORPORATION
- 当前专利权人： SUMCO CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-291338 20071108
- 国际申请： PCT/JP2008/070235 WO 20081106
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.
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