摘要:
An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.
摘要:
There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.
摘要:
An object of the present invention is to provide a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, with which sulfur compounds in the hydrocarbon oil can be desulfurized to a high degree and which simultaneously is extremely effective in reducing the wax deposit content; a process for producing the catalyst; and a method of hydrotreatment with the catalyst.The invention relates to a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, comprising a support comprising an inorganic oxide containing at least one crystalline aluminosilicate having a one- or two-dimensional pore path system and, having provided thereon, 10 to 35% by mass of a metal in Group 6 of the Periodic Table, 1 to 10% by mass of a metal in Group 8 of the Periodic Table, and 1.5 to 6% by mass of phosphorus in terms of oxide amount on the basis of the catalyst and further containing 2 to 14% by mass of carbon derived from an organic acid in terms of element amount on the basis of the catalyst, wherein the content of the crystalline aluminosilicate having a one- or two-dimensional pore path system in the support is 3 to 25% by mass on the basis of the support; a process for producing the catalyst; and a method of hydrotreatment with the catalyst.
摘要:
In a susceptor (10) having a wafer pocket (101) for receiving a wafer W at the time of vapor-phase growth, the wafer pocket has at least a first pocket portion (102) for loading an outer circumferential portion of the wafer and a second pocket portion (103) formed to be lower than the first pocket and having a smaller diameter than that of the first pocket portion, and a fluid passage (105) having one end (105a) opening on a vertical wall (103a) of said second pocket portion and the other end (105b) opening on a back surface (104) or a side surface (106) of the susceptor is formed.
摘要:
A TEG (Test Element Group) block 1 includes a TFT (Thin Film Transistor) test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. A TEG block 2 includes a resistance test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. In these TEG blocks, the test terminals are arranged with the same pattern. Each of the test elements in each TEG block is connected to at least one of a plurality of test terminals included in that TEG block. The test elements can be efficiently formed on the substrate in view of the space on a display device substrate or the preference of characteristics to be evaluated. Moreover, characteristics of each test element can be conducted with a common probe regardless of the type of display device.
摘要:
A connector for a card having a housing for housing a card equipped with a terminal member, a connection terminal attached to the housing for contacting the terminal member of the card and a detecting switch equipped with a first contact member and a second contact member for detecting separation from each other and the insertion of a card into the housing, wherein at least the first contact member or the second contact member is equipped with a fixed portion fixed to the housing and a moving portion displaceable by the housing and unevenly mated with the housing.
摘要:
An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.
摘要:
A method for manufacturing a liquid crystal display which employs an active matrix substrate including a plurality of pixels arranged in matrix on a substrate and reflecting electrodes formed in the pixels, respectively. The method comprises (a) a laminated conductive film formation step of sequentially forming a conductive metal film and an amorphous transparent conductive film on a substrate to form a laminated conductive film and (b) a reflecting electrode formation step of patterning the laminated conductive film into a reflecting electrode, wherein the step (b) includes a first etching step of etching the conductive metal film and the amorphous transparent conductive film simultaneously and a second etching step of etching the amorphous transparent conductive film only.
摘要:
In one aspect, a scrubber brush assembly is provided. The scrubber brush assembly includes (1) a cylindrical brush including exterior and interior surfaces; and (2) a sleeve having an exterior surface coupled to the interior surface of the scrubber brush and an interior surface. The exterior surface of the sleeve includes first coupling features adapted to prevent rotation of the sleeve relative to the brush. The scrubber brush assembly also includes a mandrel coupled to the interior surface of the sleeve. Numerous other aspects are provided.