发明申请
- 专利标题： RESISTIVE MEMORY CELL FABRICATION METHODS AND DEVICES
- 专利标题（中）： 电阻记忆体制备方法和装置
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申请号： US12783375申请日： 2010-05-19
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公开(公告)号： US20100230654A1公开(公告)日： 2010-09-16
- 发明人: Jun Liu , Mike Violette
- 申请人： Jun Liu , Mike Violette
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are configured to evenly distribute a current with a generally hemispherical current density distribution around the first electrode.
公开/授权文献
- US08193521B2 Resistive memory cell fabrication methods and devices 公开/授权日：2012-06-05
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