发明申请
- 专利标题： SELF-ALIGNED SCHOTTKY DIODE
- 专利标题（中）： 自对准肖特基二极管
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申请号： US12538213申请日： 2009-08-10
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公开(公告)号： US20100230751A1公开(公告)日： 2010-09-16
- 发明人: Alan B. Botula , Alvin J. Joseph , Alan F. Norris , Robert M. Rassel , Yun Shi
- 申请人： Alan B. Botula , Alvin J. Joseph , Alan F. Norris , Robert M. Rassel , Yun Shi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A Schottky barrier diode comprises a doped guard ring having a doping of a second conductivity type in a semiconductor-on-insulator (SOI) substrate. The Schottky barrier diode further comprises a first-conductivity-type-doped semiconductor region having a doping of a first conductivity type, which is the opposite of the second conductivity type, on one side of a dummy gate electrode and a Schottky barrier structure surrounded by the doped guard ring on the other side. A Schottky barrier region may be laterally surrounded by the dummy gate electrode and the doped guard ring. The doped guard ring includes an unmetallized portion of a gate-side second-conductivity-type-doped semiconductor region having a doping of a second conductivity type. A Schottky barrier region may be laterally surrounded by a doped guard ring including a gate-side doped semiconductor region and a STI-side doped semiconductor region. Design structures for the inventive Schottky barrier diode are also provided.
公开/授权文献
- US08008142B2 Self-aligned Schottky diode 公开/授权日：2011-08-30
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