利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20100232061A1 ELECTRIC FIELD INFORMATION READING HEAD, ELECTRIC FIELD INFORMATION WRITING/READING HEAD AND FABRICATION METHODS THEREOF AND INFORMATION STORAGE DEVICE USING THE SAME 失效
电场信息读取头，电场信息写入/读取头及其制造方法及其使用的信息存储装置

ELECTRIC FIELD INFORMATION READING HEAD, ELECTRIC FIELD INFORMATION WRITING/READING HEAD AND FABRICATION METHODS THEREOF AND INFORMATION STORAGE DEVICE USING THE SAME
摘要：
Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.
摘要（中）：

提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，电场信息读取头包括半导体衬底，该半导体衬底具有形成在面向记录的表面的一端的中心部分的电阻区域 介质，电阻区域被轻掺杂杂质，形成在电阻区两侧的源区和漏区，源极区和漏区比电阻区更加掺杂杂质。 源极区域和漏极区域沿着面向记录介质的半导体衬底的表面延伸，并且电极分别与源极区域和漏极区域电连接。 此外，提供了制造电场信息读取头的方法和在晶片上批量生成电场信息读取头的方法。

公开/授权文献
信息查询
Global Dossier Espacenet
0/0