A resistance change type memory of an aspect of the present invention including a first wiring configured to extend in a first direction, a second wiring configured to extend in a second direction crossing the first direction, a series circuit configured to connect to the first and second wirings, the series circuit including a non-ohmic element being more conductive in the first to second wiring direction than in the second to first direction and a resistance change type storage element in which data is stored according to a change of a resistance state, an energy supplying circuit configured to connect to the first wiring to supply energy to the first wiring, the energy being used to store the data in the resistance change type storage element, and a capacitance circuit configured to include a capacitive element and being connected to the second wiring.