发明申请
US20100237336A1 NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES
有权
NANOTUBE ENABLED,GATE-VOLTAGE CONTROLLED LED发光二极管
- 专利标题: NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES
- 专利标题(中): NANOTUBE ENABLED,GATE-VOLTAGE CONTROLLED LED发光二极管
-
申请号: US12677457申请日: 2008-09-10
-
公开(公告)号: US20100237336A1公开(公告)日: 2010-09-23
- 发明人: Andrew Gabriel Rinzler , Bo Liu , Mitchell Austin McCarthy , John Robert Reynolds , Franky So
- 申请人: Andrew Gabriel Rinzler , Bo Liu , Mitchell Austin McCarthy , John Robert Reynolds , Franky So
- 申请人地址: US FL Gainesville
- 专利权人: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
- 当前专利权人: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
- 当前专利权人地址: US FL Gainesville
- 国际申请: PCT/US2008/075866 WO 20080910
- 主分类号: H01L51/30
- IPC分类号: H01L51/30 ; H01L51/54
摘要:
Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.