Invention Application
US20100237413A1 Semiconductor device and method for manufacturing semiconductor device
审中-公开
半导体装置及半导体装置的制造方法
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US12659161Application Date: 2010-02-26
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Publication No.: US20100237413A1Publication Date: 2010-09-23
- Inventor: Hiroki Kasai
- Applicant: Hiroki Kasai
- Applicant Address: JP Tokyo
- Assignee: OKI SEMICONDUCTOR CO., LTD.
- Current Assignee: OKI SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Tokyo
- Priority: JP2009-069687 20090323
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78
Abstract:
A semiconductor device has a LOCOS film formed on at least one of a drain side and a source side of a semiconductor substrate surface. A gate oxide film connected to the LOCOS film is formed on the semiconductor substrate surface. A conductive film is formed to cover the gate oxide film and the LOCOS film. A gate electrode is formed by etching the conductive film such that an end portion of the conductive film is positioned above the LOCOS film. The LOCOS film is etched such that an end portion of the LOCOS film is in alignment with an end portion of the gate electrode, thereby forming a recessed portion in a part of the semiconductor substrate surface from which the LOCOS film has been removed. A side wall spacer is formed to cover a side surface of the gate electrode such that a bottom surface of the side wall spacer contacts a surface of the recessed portion. A drain region and a source region are formed by doping a impurity to the semiconductor substrate surface on either side of the gate electrode and the side wall spacer.
Public/Granted literature
- US3173465A Transformable bag Public/Granted day:1965-03-16
Information query
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