发明申请
- 专利标题: MULTILAYER CHIP CAPACITOR AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 多层芯片电容器及其制造方法
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申请号: US12650134申请日: 2009-12-30
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公开(公告)号: US20100238605A1公开(公告)日: 2010-09-23
- 发明人: Byoung Hwa LEE , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- 申请人: Byoung Hwa LEE , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 优先权: KR10-2009-0022578 20090317
- 主分类号: H01G4/228
- IPC分类号: H01G4/228
摘要:
A multilayer chip capacitor includes: a capacitor main body; a plurality of first and second inner electrodes; and m (m≧3) number of first and second outer electrodes. The plurality of first and second inner electrodes are connected with two outer electrodes positioned on both opposing surfaces and having the same polarity as that of the first and second inner electrodes, and classified into a plurality of groups depending on the locations of the outer electrodes connected to the first and second inner electrodes. At least one of two outer electrodes connected with inner electrodes of each group is different from an outer electrode connected with inner electrodes of a different group having the same polarity, and inner electrodes of one group are connected to outer electrodes connected with at least another one group so that all the inner electrodes belonging to the same polarity can be electrically connected.
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