发明申请
US20100238745A1 Integrated Circuit with Separate Supply Voltage for Memory That is Different from Logic Circuit Supply Voltage
有权
具有与逻辑电路电源电压不同的存储器的独立电源电压的集成电路
- 专利标题： Integrated Circuit with Separate Supply Voltage for Memory That is Different from Logic Circuit Supply Voltage
- 专利标题（中）： 具有与逻辑电路电源电压不同的存储器的独立电源电压的集成电路
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申请号： US12791080申请日： 2010-06-01
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公开(公告)号： US20100238745A1公开(公告)日： 2010-09-23
- 发明人: Brian J. Campbell , Vincent R. von Kaenel , Daniel C. Murray , Gregory S. Scott , Sribalan Santhanam
- 申请人： Brian J. Campbell , Vincent R. von Kaenel , Daniel C. Murray , Gregory S. Scott , Sribalan Santhanam
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
In one embodiment, an integrated circuit comprises at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method comprises a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.
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