发明申请
- 专利标题： METHODS FOR FORMING METAL GATE TRANSISTORS
- 专利标题（中）： 形成金属栅极晶体管的方法
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申请号： US12719532申请日： 2010-03-08
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公开(公告)号： US20100240204A1公开(公告)日： 2010-09-23
- 发明人: Matt YEH , Shun Wu Lin , Hui Ouyang
- 申请人： Matt YEH , Shun Wu Lin , Hui Ouyang
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/302 ; B08B3/00
摘要：
A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.
公开/授权文献
- US08268085B2 Methods for forming metal gate transistors 公开/授权日：2012-09-18
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