发明申请
- 专利标题： SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND PHASE SHIFT MASK
- 专利标题（中）： 半导体器件，其制造方法和相移片掩模
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申请号： US12764210申请日： 2010-04-21
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公开(公告)号： US20100240211A1公开(公告)日： 2010-09-23
- 发明人: Kenichi WATANABE , Michiari KAWANO , Hiroshi NAMBA , Kazuo SUKEGAWA , Takumi HASEGAWA , Toyoji SAWADA
- 申请人： Kenichi WATANABE , Michiari KAWANO , Hiroshi NAMBA , Kazuo SUKEGAWA , Takumi HASEGAWA , Toyoji SAWADA
- 申请人地址： JP Yokohama-shi
- 专利权人： FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人： FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人地址： JP Yokohama-shi
- 优先权： JP2002-072737 20020315; JP2002-286687 20020930
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an “L” shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.
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