发明申请
- 专利标题： NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 基于氮化物的半导体发光器件及其制造方法
-
申请号： US12739972申请日： 2009-09-07
-
公开(公告)号： US20100244063A1公开(公告)日： 2010-09-30
- 发明人: Toshiya Yokogawa , Ryou Kato
- 申请人： Toshiya Yokogawa , Ryou Kato
- 优先权： JP2008-231456 20080909
- 国际申请： PCT/JP2009/004415 WO 20090907
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L33/26 ; H01L33/00
摘要：
A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50. The nitride-based semiconductor multilayer structure 50 includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e≧0); and an AlfGagN layer 38 (where f+g=1, f≧0, g≧0 and f
公开/授权文献
信息查询
IPC分类:
