发明申请
- 专利标题： MASK BLANK SUBSTRATE, MASK BLANK, EXPOSURE MASK, MASK BLANK SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD
- 专利标题（中）： 掩模空白基板，掩模布，曝光掩模，掩模基板制造方法和半导体制造方法
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申请号： US12797304申请日： 2010-06-09
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公开(公告)号： US20100248092A1公开(公告)日： 2010-09-30
- 发明人: Masaru TANABE , Atsushi KAWAGUCHI , Hiroyuki AKAGAWA , Akihiro KAWAHARA
- 申请人： Masaru TANABE , Atsushi KAWAGUCHI , Hiroyuki AKAGAWA , Akihiro KAWAHARA
- 申请人地址： JP Tokyo
- 专利权人： HOYA CORPORATION
- 当前专利权人： HOYA CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-284093 20040929
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F1/00
摘要：
In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 μm or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side.
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