发明申请
- 专利标题: METHOD AND STRUCTURE FOR PERFORMING A CHEMICAL MECHANICAL POLISHING PROCESS
- 专利标题(中): 执行化学机械抛光工艺的方法与结构
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申请号: US12647359申请日: 2009-12-24
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公开(公告)号: US20100248468A1公开(公告)日: 2010-09-30
- 发明人: Lily Jiang , Meng Feng Cai , Jiang Guang Chang
- 申请人: Lily Jiang , Meng Feng Cai , Jiang Guang Chang
- 申请人地址: CN Shanghai
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址: CN Shanghai
- 优先权: CN200810208186.4 20081229
- 主分类号: H01L21/8247
- IPC分类号: H01L21/8247
摘要:
A method for fabricating flash memory devices, e.g., NAND, NOR, is provided. The method includes providing a semiconductor substrate. The method includes forming a second polysilicon layer overlying a plurality of floating gate structures to cause formation of an upper surface provided on the second polysilicon layer. The upper surface has a first recessed region and a second recessed region. The method includes depositing a photo resist material overlying the upper surface to fill the first recessed region and the second recessed region to form a second upper surface region and cover a first elevated region, a second elevated region, and a third elevated region. The method subjects the second upper surface region to a chemical mechanical polishing process to remove the first elevated region, the second elevated region, and the third elevated region to cause formation of a substantially planarized second polysilicon layer free from the fill material.