发明申请
- 专利标题： PULSED PLASMA HIGH ASPECT RATIO DIELECTRIC PROCESS
- 专利标题（中）： 脉冲等离子高比例电介质工艺
-
申请号： US12711061申请日： 2010-02-23
-
公开(公告)号： US20100248488A1公开(公告)日： 2010-09-30
- 发明人: Ankur Agarwal , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , Thorsten B. Lill
- 申请人： Ankur Agarwal , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , Thorsten B. Lill
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.
公开/授权文献
- US08382999B2 Pulsed plasma high aspect ratio dielectric process 公开/授权日：2013-02-26
信息查询
IPC分类:
