发明申请
- 专利标题: METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM
- 专利标题(中): 氧化物薄膜制备液体的方法
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申请号: US12739657申请日: 2008-02-14
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公开(公告)号: US20100251936A1公开(公告)日: 2010-10-07
- 发明人: Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
- 申请人: Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
- 申请人地址: KR Seodaemun-Gu ,Seoul
- 专利权人: INDUSTRY-ACADEMIC COOPERATION FOUNDATION ,
- 当前专利权人: INDUSTRY-ACADEMIC COOPERATION FOUNDATION ,
- 当前专利权人地址: KR Seodaemun-Gu ,Seoul
- 优先权: KR10-2007-0107336 20071024
- 国际申请: PCT/KR2008/000864 WO 20080214
- 主分类号: C09D1/00
- IPC分类号: C09D1/00
摘要:
A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.
公开/授权文献
- US08523996B2 Method of fabricating liquid for oxide thin film 公开/授权日:2013-09-03
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