发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US12753582申请日: 2010-04-02
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公开(公告)号: US20100253317A1公开(公告)日: 2010-10-07
- 发明人: Shinya OKUNO , Kiyohiro FURUTANI
- 申请人: Shinya OKUNO , Kiyohiro FURUTANI
- 申请人地址: JP Tokyo
- 专利权人: Elpida Memory, Inc.
- 当前专利权人: Elpida Memory, Inc.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-092282 20090406
- 主分类号: G05F3/16
- IPC分类号: G05F3/16 ; H01L27/06
摘要:
To include a first X decoder constituted by a transistor whose off-leakage current has a first temperature characteristic, a pre-decoder circuit and a peripheral circuit constituted by a transistor whose off-leakage current has a second temperature characteristic, a power supply control circuit that inactivates the X decoder when a temperature exceeds a first threshold during a standby state, and a power supply control circuit that inactivates the pre-decoder and the peripheral circuit when a temperature exceeds a second threshold during the standby state. According to the present invention, whether power supply control is performed on a plurality of circuit blocks is determined based on different temperatures, therefore optimum power supply control can be performed on each of circuit blocks.
公开/授权文献
- US07940112B2 Semiconductor device 公开/授权日:2011-05-10
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