发明申请
- 专利标题: Film Deposition Apparatus and a Method of Manufacturing a Light Emitting Device Using the Apparatus
- 专利标题(中): 薄膜沉积装置和使用该装置制造发光装置的方法
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申请号: US12759776申请日: 2010-04-14
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公开(公告)号: US20100255184A1公开(公告)日: 2010-10-07
- 发明人: Shunpei Yamazaki , Toshimitsu Konuma , Takeshi Fukunaga
- 申请人: Shunpei Yamazaki , Toshimitsu Konuma , Takeshi Fukunaga
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP11-337190 19991129
- 主分类号: B05D5/06
- IPC分类号: B05D5/06
摘要:
To provide a film deposition apparatus capable of forming an EL element of high reliability. An oxidization cell (205) is placed in a liquid phase film deposition chamber (109) such as a spin coater. The oxidization cell is provided with an oxygen gettering agent (209) comprised of an element that belongs to Group 1 or 2 of the periodic table. The oxygen gettering agent (209) is oxidized consuming oxygen in the atmosphere of the chamber, to thereby reduce the oxygen concentration in the atmosphere to 1 ppb or less. This makes it possible to form an EL element in a substantially oxygen-less state, greatly improving the reliability of the EL element.
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