Invention Application
US20100257415A1 INSTRUCTION-BASED PROGRAMMABLE MEMORY BUILT-IN SELF TEST CIRCUIT AND ADDRESS GENERATOR THEREOF
审中-公开
基于指令的可编程存储器内置自检程序及其地址发生器
- Patent Title: INSTRUCTION-BASED PROGRAMMABLE MEMORY BUILT-IN SELF TEST CIRCUIT AND ADDRESS GENERATOR THEREOF
- Patent Title (中): 基于指令的可编程存储器内置自检程序及其地址发生器
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Application No.: US12416646Application Date: 2009-04-01
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Publication No.: US20100257415A1Publication Date: 2010-10-07
- Inventor: Chung-Fu Lin , Yeong-Jar Chang
- Applicant: Chung-Fu Lin , Yeong-Jar Chang
- Applicant Address: TW Hsinchu
- Assignee: FARADAY TECHNOLOGY CORP.
- Current Assignee: FARADAY TECHNOLOGY CORP.
- Current Assignee Address: TW Hsinchu
- Main IPC: G11C29/12
- IPC: G11C29/12 ; G06F11/22 ; G06F12/02

Abstract:
An instruction-based programmable memory built-in self test (P-MBIST) circuit and an address generator thereof are provided. The P-MBIST circuit generates control signals according to the decoding of compact test instructions provided by an external automatic test equipment (ATE). The address generator generates memory addresses according to the control signals. The control signals and the memory addresses are sent to an embedded memory to perform the MBIST. The algorithm-specific design of the P-MBIST circuit and the address generator enables them to support multiple test algorithms at full clock speed and occupy smaller chip area.
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