发明申请
- 专利标题: Method of Fabricating Element Including Nanogap Electrodes
- 专利标题(中): 包括纳米石墨电极的元件制造方法
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申请号: US12756522申请日: 2010-04-08
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公开(公告)号: US20100257726A1公开(公告)日: 2010-10-14
- 发明人: Shigeo FURUTA , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
- 申请人: Shigeo FURUTA , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
- 申请人地址: JP Daito-shi JP Daito-shi
- 专利权人: Funai Electric Advanced Applied Technology Research Institute Inc.,Funai Electric Co., Ltd.
- 当前专利权人: Funai Electric Advanced Applied Technology Research Institute Inc.,Funai Electric Co., Ltd.
- 当前专利权人地址: JP Daito-shi JP Daito-shi
- 优先权: JP2009-095575 20090410
- 主分类号: H01C17/00
- IPC分类号: H01C17/00
摘要:
Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.
公开/授权文献
- US09130159B2 Method of fabricating element including nanogap electrodes 公开/授权日:2015-09-08
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