发明申请
- 专利标题： Plasma Processing Apparatus
- 专利标题（中）： 等离子体处理装置
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申请号： US12783686申请日： 2010-05-20
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公开(公告)号： US20100263796A1公开(公告)日： 2010-10-21
- 发明人: Manabu Edamura , Go Miya , Ken Yoshioka
- 申请人： Manabu Edamura , Go Miya , Ken Yoshioka
- 优先权： JP2004-117894 20040413
- 主分类号： H01L21/465
- IPC分类号： H01L21/465 ; C23F1/08 ; C23C16/00
摘要：
A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements.
公开/授权文献
- US08231759B2 Plasma processing apparatus 公开/授权日：2012-07-31
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