发明申请
US20100264425A1 TRANSISTORS FOR REPLACING METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN NANOELECTRONICS
有权
用于替代纳米电子学中的金属氧化物半导体场效应晶体管的晶体管
- 专利标题： TRANSISTORS FOR REPLACING METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN NANOELECTRONICS
- 专利标题（中）： 用于替代纳米电子学中的金属氧化物半导体场效应晶体管的晶体管
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申请号： US12826480申请日： 2010-06-29
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公开(公告)号： US20100264425A1公开(公告)日： 2010-10-21
- 发明人: Mark S. Miller , Justin B. Jackson , Divesh Kapoor , Justin Millis
- 申请人： Mark S. Miller , Justin B. Jackson , Divesh Kapoor , Justin Millis
- 申请人地址： US UT Salt Lake City
- 专利权人： UNIVERSITY OF UTAH RESEARCH FOUNDATION
- 当前专利权人： UNIVERSITY OF UTAH RESEARCH FOUNDATION
- 当前专利权人地址： US UT Salt Lake City
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/8232
摘要：
Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.
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